Effect of growth conditions on InAs nanoislands formation on Si(100) surface

Authors
Cirlin, GE Polyakov, NK Petrov, VN Egorov, VA Samsonenko, YB Denisov, DV Busov, VM Volovik, BV Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Zakharov, ND Werner, P
Citation
Ge. Cirlin et al., Effect of growth conditions on InAs nanoislands formation on Si(100) surface, CZEC J PHYS, 49(11), 1999, pp. 1547-1552
Citations number
15
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
00114626 → ACNP
Volume
49
Issue
11
Year of publication
1999
Pages
1547 - 1552
Database
ISI
SICI code
0011-4626(199911)49:11<1547:EOGCOI>2.0.ZU;2-Q
Abstract
In this paper we have studied the island formation during InAs/Si(100) thre e dimensional (3D) heteroepitaxial growth using RHEED, SEM and TEM methods. We have found the strong influence of the growth conditions on the surface morphology. Both an important role during the growth in InAs/Si are formed at the Si(100) when lateral size is less kinetic and energetic parameters play system. Dislocation-free InAs islands then 5 nm.