Charge screening around Si dopant atoms in GaAs by X-STM

Authors
Pacherova, O Slezak, J Cukr, M Bartos, I
Citation
O. Pacherova et al., Charge screening around Si dopant atoms in GaAs by X-STM, CZEC J PHYS, 49(11), 1999, pp. 1621-1624
Citations number
5
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
00114626 → ACNP
Volume
49
Issue
11
Year of publication
1999
Pages
1621 - 1624
Database
ISI
SICI code
0011-4626(199911)49:11<1621:CSASDA>2.0.ZU;2-K
Abstract
In this contribution we show that the screening effect around the Si dopant atoms in GaAs can be observed not only at low temperature, as reported ear lier, but also at room temperature.