In this paper we review our recent results of in-situ luminescence studies
of semiconductor electrodes. Three classes of materials are considered: sin
gle crystal compound semiconductors, porous silicon and semiconducting oxid
es doped with luminescent ions. We show how photoluminescence (PL) and elec
troluminescence (EL) measurements can give information about the optical an
d optoelectrical properties of the solid and about mechanisms of surface re
actions. The relevance of time- and frequency-dependent measurements, which
have been largely neglected, is stressed. (C) 1999 Elsevier Science Ltd. A
ll rights reserved.