New NAND-style cell eases design of dense, low-voltage flash memory

Authors
Bursky, D
Citation
D. Bursky, New NAND-style cell eases design of dense, low-voltage flash memory, ELECTR DES, 47(25), 1999, pp. 34-34
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONIC DESIGN
ISSN journal
00134872 → ACNP
Volume
47
Issue
25
Year of publication
1999
Pages
34 - 34
Database
ISI
SICI code
0013-4872(199912)47:25<34:NNCEDO>2.0.ZU;2-T