A general parameter-extraction method for transistor noise models

Authors
Stenarson, J Garcia, M Angelov, I Zirath, H
Citation
J. Stenarson et al., A general parameter-extraction method for transistor noise models, IEEE MICR T, 47(12), 1999, pp. 2358-2363
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
47
Issue
12
Year of publication
1999
Pages
2358 - 2363
Database
ISI
SICI code
0018-9480(199912)47:12<2358:AGPMFT>2.0.ZU;2-A
Abstract
A general direct extraction procedure for transistor noise models that incl udes two correlated noise sources is developed, Using direct extraction met hods instead of optimization make it possible to study the frequency depend ence of the model parameters. The extraction procedure is demonstrated for a silicon carbide MESFET, using both PRC and Pospieszalski models. The extr acted models show good agreement with measured noise parameters.