An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor

In this: paper, an lateral diffused metal-oxide-semiconductor-based very hi gh-frequency class-E power amplifier has been investigated theoretically an d experimentally. Simulations were verified by amplifier measurements and a record-high class-E output power was obtained: at 144 MHz, which is in exc ellent agreement with simulations. The key of the results is the use of eff icient device models, simulation tools, and the invention of a novel high-Q inductor for the output series resonance network. The latter allows for lo w losses in the output network and, simultaneously, a wide tuning range for maximum output power or maximum efficiency optimization.