Structural properties of p(+)-type porous silicon layers versus the substrate orientation: an X-ray diffraction comparative study

Citation
C. Faivre et D. Bellet, Structural properties of p(+)-type porous silicon layers versus the substrate orientation: an X-ray diffraction comparative study, J APPL CRYS, 32, 1999, pp. 1134-1144
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF APPLIED CRYSTALLOGRAPHY
ISSN journal
00218898 → ACNP
Volume
32
Year of publication
1999
Part
6
Pages
1134 - 1144
Database
ISI
SICI code
0021-8898(199912)32:<1134:SPOPPS>2.0.ZU;2-P
Abstract
The structural properties of (001)- and (111)-oriented pi-type porous silic on samples have been investigated using X-ray techniques. X-ray reflectivit y applied to thin layers of both orientations allows the estimation of the layer thickness, the porosity and the interface roughness. High-resolution X-ray diffraction was used to obtain symmetrical and asymmetrical rocking c urves, as well as maps of the reciprocal space. The lattice-mismatch parame ter was measured and some indications about the pore shape, orientation and size were deduced. The obtained X-ray curves as well as differential scann ing calorimetry data are compared to discuss the influence of the substrate orientation on the structural properties of p(+)-type porous silicon mater ial.