STUDY ON ELECTROLUMINESCENT BEHAVIOR OF GA ALQ(3)/TCAQ/ITO DOUBLE-LAYER DEVICE/

Authors
CAO YA BAI YB MEN QJ CHEN CH YANG JH CHAI XD YANG WS WU ZW LI TJ
Citation
Ya. Cao et al., STUDY ON ELECTROLUMINESCENT BEHAVIOR OF GA ALQ(3)/TCAQ/ITO DOUBLE-LAYER DEVICE/, Synthetic metals, 85(1-3), 1997, pp. 1267-1268
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
85
Issue
1-3
Year of publication
1997
Pages
1267 - 1268
Database
ISI
SICI code
0379-6779(1997)85:1-3<1267:SOEBOG>2.0.ZU;2-A
Abstract
A double layer electroluminescent (EL) device, Ga/Alq(3)/TCAQ/ITO was fabricated by using Alq(3) as emitter layer, TCAQ as hole transport la yer, and Ga and ITO as electrodes. Based on the data of UV-visible, su rface photovoltage spectra (SPS), electric-field-induced SPS (EFISPS) and cyclic voltammograms, the energy band model of the EL device was p ut forward and its electroluminescent behavior was explained by the mo del.