Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition

The structural properties of as-grown and rapid thermal oxidized Si1-x-yGex Cy epitaxial layers have been examined using a combination of infrared, x-r ay photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and R aman spectroscopy techniques. Carbon incorporation into the Si1-x-yGexCy sy stem can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1-x-yGexCy film depend on the type of strain ( i.e., carbon concentration) of the as-prepared film. For compressive or ful ly compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1-xGex films. For tensile films, two broad regions, one with carbon content higher and the ot her lower than that required for full strain compensation, coexist in the o xidized films. (C) 2000 American Institute of Physics. [S0021-8979(00)08201 -3].