Energy-level engineering of self-assembled quantum dots by using AlGaAs alloy cladding layers

Authors
Kim, YS Lee, UH Lee, D Rhee, SJ Leem, YA Ko, HS Kim, DH Woo, JC
Citation
Ys. Kim et al., Energy-level engineering of self-assembled quantum dots by using AlGaAs alloy cladding layers, J APPL PHYS, 87(1), 2000, pp. 241-244
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
1
Year of publication
2000
Pages
241 - 244
Database
ISI
SICI code
0021-8979(20000101)87:1<241:EEOSQD>2.0.ZU;2-9
Abstract
The ground-state energy level of an InAs quantum dot (QD) system can be cha nged from 1070 to 700 nm by changing the aluminum composition in the AlxGa1 -xAs matrix. For all the QDs, the lattice-mismatched strains are the same a s that of InAs/GaAs QDs, so that QDs are easily formed. Photoluminescence s ignals from the structures were strong at low temperature and stayed relati vely high at room temperature. The results suggest that these highly strain ed QDs in the alloy matrices could be an excellent choice for the energy-le vel engineering of QDs. (C) 2000 American Institute of Physics. [S0021-8979 (00)01201-9].