Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film

Citation
Ch. Hsieh et al., Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J APPL PHYS, 87(1), 2000, pp. 280-284
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
1
Year of publication
2000
Pages
280 - 284
Database
ISI
SICI code
0021-8979(20000101)87:1<280:PSOAFS>2.0.ZU;2-2
Abstract
A detailed piezoreflectance (PzR) study of an Fe-containing silicon carbon nitride crystalline film in the temperature range between 15 and 580 K was performed. From the line shape fit of the PzR spectra, the impurity to band and the direct band-to-band transition energies which are denoted as E-i a nd E-g(d), respectively, at various temperatures were accurately determined . The parameters that describe the temperature dependence of E-i and E-g(d) are evaluated and discussed. (C) 2000 American Institute of Physics. [S002 1-8979(00)07001-8].