LIGHT-EMITTING-DIODES BASED ON HIGH ELECTRON-AFFINITY POLYMER LANGMUIR-BLODGETT-FILMS

Citation
Yq. Liu et al., LIGHT-EMITTING-DIODES BASED ON HIGH ELECTRON-AFFINITY POLYMER LANGMUIR-BLODGETT-FILMS, Synthetic metals, 85(1-3), 1997, pp. 1279-1280
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
ISSN journal
03796779
Volume
85
Issue
1-3
Year of publication
1997
Pages
1279 - 1280
Database
ISI
SICI code
0379-6779(1997)85:1-3<1279:LBOHEP>2.0.ZU;2-6
Abstract
To balance the electron injection and the hole injection and to improv e the efficiency in polymer light-emitting diode (LED) by using air-st able electrode such as aluminum, we used high electron affinity polyme r, alkoxyl-substituted poly(cyanoterephthalylidene) (C-16-CNPPV), as t he emission layer. The polymer can form stable condensed film at air-w ater interface, its limiting repeating unit area obtained from the pi- A isotherm is close to the theoretical area calculated by Corey-Paulin g-Koltun molecule model, and the transfer ratios were 0.7 similar to 0 .8. LEDs with configuration of ITO/PPV/C-16-CNPPV LB films/Al was fabr icated. The I-V curve reveals typical diode characteristics with recti fication ratio of 10(3). The uniform visible emitting light can be cle arly seen in a dark room at low driving voltage.