Thermoelectric properties of pure and doped FeMSb (M=V,Nb)

Citation
Dp. Young et al., Thermoelectric properties of pure and doped FeMSb (M=V,Nb), J APPL PHYS, 87(1), 2000, pp. 317-321
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
1
Year of publication
2000
Pages
317 - 321
Database
ISI
SICI code
0021-8979(20000101)87:1<317:TPOPAD>2.0.ZU;2-P
Abstract
The thermoelectric properties of the pure and doped half-Heusler compounds FeVSb and FeNbSb are reported. The electrical resistivities are between 0.2 and 20 m Omega cm at room temperature. Thermoelectric power measurements i ndicate that FeVSb is an n-type material with moderate Seebeck coefficients near -70 mu V/K at 300 K. The thermal conductivity at room temperature is large, approximately 0.1 W/cm K, and increases with decreasing temperature. Chemical substitutions, which have a dramatic effect on the transport prop erties, were performed in an effort to enhance the thermoelectric performan ce. Band-structure calculations are presented for the pure materials. (C) 2 000 American Institute of Physics. [S0021-8979(00)03001-2].