Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides

We have studied the effects of nitridation with nitric oxide on the leakage current of thin (< 8 nm) gate oxides. Under gate injection of electrons th e oxide leakage current behavior reflects the trend of the electrical thick ness and flatband voltage and it can be modeled by the Fowler-Nordheim rela tion. Conversely, a different behavior is observed for electron injection f rom the substrate. The leakage current during substrate injection is strict ly related to the nitrogen that, as observed by secondary ion mass spectrom etry, is located at the SiO2/Si substrate interface. (C) 2000 American Inst itute of Physics. [S0021-8979(00)00201-2].