Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers

Citation
Pw. Fry et al., Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers, J APPL PHYS, 87(1), 2000, pp. 615-617
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
87
Issue
1
Year of publication
2000
Pages
615 - 617
Database
ISI
SICI code
0021-8979(20000101)87:1<615:MGALSI>2.0.ZU;2-E
Abstract
The modal gain of an InAs/GaAs self-organized quantum dot laser is determin ed from a measurement of the normal incidence, interband photocurrent. The maximum modal gain of the ground state transition is shown to have a value of (7 +/- 3) cm(-1), considerably smaller than typical values for comparabl e quantum well lasers. The photocurrent technique is demonstrated to be a c onvenient and simple method for determining the spectral form of the gain a nd for comparing the modal gain of different devices. The consequences of t he small modal gain for the laser characteristics are discussed. (C) 2000 A merican Institute of Physics. [S0021-8979(00)09201-X].