DLTS INVESTIGATION OF ACCEPTOR STATES IN P3MET SCHOTTKY-BARRIER DIODES

Authors
JONES GW TAYLOR DM GOMES HL
Citation
Gw. Jones et al., DLTS INVESTIGATION OF ACCEPTOR STATES IN P3MET SCHOTTKY-BARRIER DIODES, Synthetic metals, 85(1-3), 1997, pp. 1341-1342
Citations number
3
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
85
Issue
1-3
Year of publication
1997
Pages
1341 - 1342
Database
ISI
SICI code
0379-6779(1997)85:1-3<1341:DIOASI>2.0.ZU;2-0
Abstract
Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed f rom electropolymerised poly(3-methylthiophene). The capacitance transi ents appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isoch ronal differential capacitance curves that depend on temperature in th e manner predicted by theory.