CONDUCTING POLYMER-FULLERENE D-A PHOTOCELL WITH DECREASED SERIAL RESISTANCE - ITO PAT(C-60)(Y)/C-60/AL STRUCTURE/

Authors
TADA K HIDAYAT R HIROHATA M KAWAI T LEE SB BAKHADIROV IU ZAKHIDOV AA YOSHINO K
Citation
K. Tada et al., CONDUCTING POLYMER-FULLERENE D-A PHOTOCELL WITH DECREASED SERIAL RESISTANCE - ITO PAT(C-60)(Y)/C-60/AL STRUCTURE/, Synthetic metals, 85(1-3), 1997, pp. 1349-1350
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
85
Issue
1-3
Year of publication
1997
Pages
1349 - 1350
Database
ISI
SICI code
0379-6779(1997)85:1-3<1349:CPDPWD>2.0.ZU;2-N
Abstract
The electrical characteristics and photoirradiation effects of a condu cting polymer/C-60 heterojunction device with C-60 doped conducting po lymer layer were investigated in contrast to those of non-doped device . The C-60 doping to conducting polymer layer should be effective not only to improve short circuit photocurrent but also to reduce the seri al resistance of the conducting polymer layer. Both effects can be int erpreted in terms of photoinduced charge transfer between conducting p olymer and C-60.