Hl. Gomes et al., INFLUENCE OF FABRICATION CONDITIONS ON THE ELECTRICAL BEHAVIOR OF POLYMER SCHOTTKY DIODES, Synthetic metals, 85(1-3), 1997, pp. 1351-1352
Evidence is presented which shows that anomalies in the I-V characteri
stics of Schottky diodes formed from electrodeposited poly(3-methylthi
ophene) are related to the time films are held under vacuum prior to d
eposition of the rectifying aluminium electrode. For short times (simi
lar to 15 mins) a plateau appears in the forward bias characteristic w
hich disappears leading to a significant voltage offset as the device
ages or is driven into high forward bias.