LIGHT-ACTIVATED P-N-JUNCTION DEVICE BASED ON BILAYER SUBSTITUTED POLYTHIOPHENE DERIVATIVES

Authors
GREENWALD Y POPLAWSKI J EHRENFREUND E SPEISER S
Citation
Y. Greenwald et al., LIGHT-ACTIVATED P-N-JUNCTION DEVICE BASED ON BILAYER SUBSTITUTED POLYTHIOPHENE DERIVATIVES, Synthetic metals, 85(1-3), 1997, pp. 1353-1354
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
85
Issue
1-3
Year of publication
1997
Pages
1353 - 1354
Database
ISI
SICI code
0379-6779(1997)85:1-3<1353:LPDBOB>2.0.ZU;2-#
Abstract
A new photoinduced current rectifier based on an all-organic donor-acc eptor bilayer substituted polythiophene derivative is described. Under visible and UV illumination (350-750 nm), a p-n junction is formed le ading to current rectification. Maximum photo-rectified current is obt ained at congruent to 400 nm, with a sharp decrease at shorter wavelen gths. This sharp decrease indicates that photons with energy higher th an 3.1 eV quench the light activation of this bilayer device.