APPLICATION TO ELECTRONIC DEVICES USING ORGANIC THIN-FILMS BY ION-BEAM-EVAPORATION METHOD

Citation
J. Kyokane et al., APPLICATION TO ELECTRONIC DEVICES USING ORGANIC THIN-FILMS BY ION-BEAM-EVAPORATION METHOD, Synthetic metals, 85(1-3), 1997, pp. 1393-1394
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
ISSN journal
03796779
Volume
85
Issue
1-3
Year of publication
1997
Pages
1393 - 1394
Database
ISI
SICI code
0379-6779(1997)85:1-3<1393:ATEDUO>2.0.ZU;2-8
Abstract
Among various methods for preparation of organic thin films, we propos ed an ion implantation technique using positive ion beams of low energ y under 50 similar to 100 eV. Tne Al electrolytic capacitor with charg e transfer complex as solid electrolyte, the electroluminescent (EL) d iode with double-layer structure (Mg:In/Alq(3)/TPD/ITO) and the solar cell with Schottky junction or heterojunction of organic thin films we re prepared by this method. The solid electrolytic capacitor with a go od high frequency response of impedance was obtained to use the evapor ated films. The light emission intensity and the life time of EL diode s were higher and longer than that of the conventional thermal deposit ion method. The conversion efficiency of the solar cells was 1.2% in t he case of Schottky structure (Al/CuPc/ITO) with the phthalocyanine co mpounds.