Silicide formation in implanted channels and interfacial reactions of metal contacts under high current density

Silicide formation in implanted channels and interfacial reactions of Ni, C o, Ti, and Cu contacts under high current density have been investigated. S ilicide lines, forming in the implanted channels, were observed in Ni and C u/p(+)-Si samples but not in Ti and Co samples. The silicide line formation is correlated to the high diffusivity of metals in Si. For the Ni/p(+)-Si samples, silicide line was found to initiate from the cathode contact. Netw ork structures at the cathode were found in both Co and Ni samples. The dep th of silicide formation was found to extend to the junction depth. The rel ationships between the silicide length and contact size, the applied curren t, and the method of the applied current are discussed.