Phase transitions and relaxer properties of doped quantum paraelectrics

Citation
W. Kleemann et al., Phase transitions and relaxer properties of doped quantum paraelectrics, J PHYS CH S, 61(2), 2000, pp. 167-176
Citations number
59
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
61
Issue
2
Year of publication
2000
Pages
167 - 176
Database
ISI
SICI code
0022-3697(200002)61:2<167:PTARPO>2.0.ZU;2-N
Abstract
Scaling properties of the paraelectric susceptibility with respect to tempe rature T and electric field E have been evidenced on solid solutions Sr1-xC axTiO3, x much less than 1, and are explained within the framework of both the transverse Ising model (TIM) and an anharmonic oscillator model (AOM). The impurity-induced ferroelectric phase transitions occurring a x > x(c) a pproximate to 0.002 are modeled using a heterogeneous TIM, which is solved numerically. Alternatively, we present a coupled mode model involving a TIM and an AOM for the impurity and the host lattice subsystems, respectively. Relaxer properties such as dielectric poly dispersivity, quasi-first-order Raman scattering, bilinear coupling of optic and acoustic phonon modes and hyper-Rayleigh light scattering in the paraelectric regime are attributed to polar nanodomains due to fluctuations of defect-induced quenched random fields (RFs). Some of these features are modeled within the framework of th e heterogeneous TIM including RF interactions. (C) 1999 Elsevier Science Lt d. All rights reserved.