Citation
Hn. Zhu et Bx. Liu, Epitaxial CoSi2 layers fabricated by a single-step technique of high-current co-ion implantation, J PHYS D, 32(23), 1999, pp. L119-L123
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727
→ ACNP
Volume
32
Issue
23
Year of publication
1999
Pages
L119 - L123
Database
ISI
SICI code
0022-3727(199912)32:23<L119:ECLFBA>2.0.ZU;2-X
Abstract
In this communication, the plain and continuous epitaxial CoSi2 was first s
ynthesized on Si(111) wafers with metal vacuum vapour are ion implantation
without in situ heating or post-annealing. The measurements on the CoSi2 la
yers showed that increasing the formation temperature and the implantation
dose can improve the crystallinity of CoSi2.