Temperature dependence of period of step wandering formed on Si(111) vicinal surfaces by DC heating

Authors
Degawa, M Minoda, H Tanishiro, Y Yagi, K
Citation
M. Degawa et al., Temperature dependence of period of step wandering formed on Si(111) vicinal surfaces by DC heating, J PHYS-COND, 11(48), 1999, pp. L551-L556
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
48
Year of publication
1999
Pages
L551 - L556
Database
ISI
SICI code
0953-8984(199912)11:48<L551:TDOPOS>2.0.ZU;2-H
Abstract
Wandering of an army of steps in phase on Si(111) vicinal surfaces (5 degre es off toward the [11 (2) over bar] direction) formed by DC heating at temp eratures 1000 < T < 1180 degrees C was studied. Periods of the step wanderi ng formed on step-down current regions depended on the temperature and had a maximum at around 1100 degrees C. This also supports the view that the wa ndering is due to the DC heating effect. The periods were also measured for the step wandering of anti-bands on terraces between step bands formed by DC heating with a step-up current and we found that the periods were apprec iably smaller than that in the step-down current regions.