Photoemission study of the bulk and surface electronic structure of Bi(111)

Citation
J. Thomas et al., Photoemission study of the bulk and surface electronic structure of Bi(111), J PHYS-COND, 11(48), 1999, pp. 9571-9580
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
48
Year of publication
1999
Pages
9571 - 9580
Database
ISI
SICI code
0953-8984(199912)11:48<9571:PSOTBA>2.0.ZU;2-O
Abstract
Angle-resolved energy distributions for photoelectrons emitted from the Bi( lll) single crystal face are presented at 16.85 eV photon energy. The varia tion of peak-energy positions as a function of the electron emission angle shows four main dispersing features located between the Fermi level and 5 e V.The bulk electronic structure is found in qualitative agreement with the pseudopotential calculation performed by Golin along the TMU and TQW symmet ry lines of the Brillouin zone. The experimental features located at <(Gamm a)over bar>; around 0.3 and 3 eV below the Fermi level are sampled in the t wo-dimensional Brillouin zone along the <(Gamma)over bar>(M) over bar<(Gamm a)over bar> and <(Gamma)over bar>(K) over bar (X) over bar symmetry directi ons (dispersion about 1 eV) and are assigned to electronic surface states.