Oscillations of hopping conductance in an array of charge-tunable self-assembled quantum dots

Citation
Ai. Yakimov et al., Oscillations of hopping conductance in an array of charge-tunable self-assembled quantum dots, J PHYS-COND, 11(48), 1999, pp. 9715-9722
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
48
Year of publication
1999
Pages
9715 - 9722
Database
ISI
SICI code
0953-8984(199912)11:48<9715:OOHCIA>2.0.ZU;2-Q
Abstract
An array of 3 x 10(7) Ge self-assembled quantum dots is embedded into the a ctive channel of a Si metal-oxide field-effect transistor. Conductance osci llations with the gate voltage resulting from successive loading of holes i nto the dots are observed. On the basis of measurements of the temperature dependence of the conductance maxima, the charge-transfer mechanism in the channel is identified as being due to variable-range hopping between the do ts, with the typical hopping energy determined by inter-dot Coulomb interac tion. The characteristic spatial dimension of the hole wavefunctions as wel l as the charging energies of the dots are determined from the conductance data.