X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon

Present work reports a study of the morphology of thin (50-600 Angstrom) po rous oxides of silicon grown in a special regime of the oscillating anodic potential. X-ray reflectivity (in-situ and ex-situ) was applied to analyze the morphology of oxides. It has been established that there is a direct co rrelation between a number of oscillations of potential during the oxide gr owth and the structure of oxide: it has a multi-layer structure with the nu mber of layers corresponding to the number of oscillations. The results are interpreted using the model of the porous structures format ion which explains the oscillatory oxide formation kinetics in terms of alt ernating processes of oxide formation and dissolution.