In-situ surface-roughness measurements during the preparation of chemically etched porous silicon

Authors
Harris, PJ Bayliss, SC Bardrick, T Hillman, R Cubitt, R
Citation
Pj. Harris et al., In-situ surface-roughness measurements during the preparation of chemically etched porous silicon, J POROUS MA, 7(1-3), 2000, pp. 47-49
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
47 - 49
Database
ISI
SICI code
1380-2224(200001)7:1-3<47:ISMDTP>2.0.ZU;2-Z
Abstract
We have monitored the stain-etching of silicon in real time using neutron r eflection. The etching process does not occur uniformly with time and possi ble dynamics of the process is under consideration. Distinct irregularities are produced on the PS surface and some gas bubbling from the cell is obse rved.