Effects of low-thermal-budget treatments on the porous Si material properties

Citation
L. Stalmans et al., Effects of low-thermal-budget treatments on the porous Si material properties, J POROUS MA, 7(1-3), 2000, pp. 67-71
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
67 - 71
Database
ISI
SICI code
1380-2224(200001)7:1-3<67:EOLTOT>2.0.ZU;2-S
Abstract
Our interest in porous silicon is due to its potential benefits in crystall ine Si solar cells. Besides the use as an anti-reflection coating, the poro us layer also acts as a light-diffusor. However major drawbacks are the sig nificant light absorption within the porous layer and both insufficient as well as unstable surface passivating capabilities. The unstable nature of t he porous Si is also reflected in the presence of suboxides after storage i n ambient. In this work we focus on rapid-thermal-oxidation (RTO) and plasm a-nitridation as low-thermal-budget chemical modification techniques in ord er to obtain a surface layer with a controlled and stable structure and com position. RTO of porous Si converts the material into SiO2 in conjunction w ith a drastically decreased porosity. Both a remote- and a direct-plasma ni tridation of porous Si are able to incorporate nitrogen uniformly throughou t the porous layer while preserving the porous character.