Our interest in porous silicon is due to its potential benefits in crystall
ine Si solar cells. Besides the use as an anti-reflection coating, the poro
us layer also acts as a light-diffusor. However major drawbacks are the sig
nificant light absorption within the porous layer and both insufficient as
well as unstable surface passivating capabilities. The unstable nature of t
he porous Si is also reflected in the presence of suboxides after storage i
n ambient. In this work we focus on rapid-thermal-oxidation (RTO) and plasm
a-nitridation as low-thermal-budget chemical modification techniques in ord
er to obtain a surface layer with a controlled and stable structure and com
position. RTO of porous Si converts the material into SiO2 in conjunction w
ith a drastically decreased porosity. Both a remote- and a direct-plasma ni
tridation of porous Si are able to incorporate nitrogen uniformly throughou
t the porous layer while preserving the porous character.