Citation
V. Strikha et al., A study of moisture effects on Ti/porous silicon/silicon Schottky barrier, J POROUS MA, 7(1-3), 2000, pp. 111-114
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224
→ ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
111 - 114
Database
ISI
SICI code
1380-2224(200001)7:1-3<111:ASOMEO>2.0.ZU;2-L
Abstract
Results of capacitance-voltage and current-voltage measurements performed o
n Ti/porous silicon (PS)/p-Si diode structures are presented. A 5-10 increa
se of conductivity and capacity has been observed at f < 10000 Hz in respon
se to the moisture change from 0 to 50%. Model of Schottky contact on thin
PS layer with the charge carriers inside of pores and PS/Si interface is ap
plied to explain the frequency dependence of conductivity/capacity as well
as moisture effect.