Near-field electron energy loss spectroscopy in porous silicon

Citation
P. Williams et al., Near-field electron energy loss spectroscopy in porous silicon, J POROUS MA, 7(1-3), 2000, pp. 159-163
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
159 - 163
Database
ISI
SICI code
1380-2224(200001)7:1-3<159:NEELSI>2.0.ZU;2-A
Abstract
First results of an Electron Energy Loss Spectroscopy in the Near Field (NF EELS) mode of n(+) porous silicon are described here. Sequences of EELS spe ctra in the low loss energy range (0-30 eV) were recorded, using a scanning transmission electron microscope, as the e-beam was scanned across a nano- hole surrounded by Si platelets. This technique is shown to be very sensiti ve to spectral and spatial changes in the electromagnetic field distributio n outside the surface of nanoparticles, governed by their local nature and shape.