Oxidized porous silicon: From dielectric isolation to integrated optical waveguides

Citation
V. Yakovtseva et al., Oxidized porous silicon: From dielectric isolation to integrated optical waveguides, J POROUS MA, 7(1-3), 2000, pp. 215-222
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
215 - 222
Database
ISI
SICI code
1380-2224(200001)7:1-3<215:OPSFDI>2.0.ZU;2-A
Abstract
A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon (PS) layers, special features of PS chemical cleaning and thermal o xidation are discussed. OPS application for dielectric isolation of compone nts of bipolar ICs and for the formation of silicon-on-insulator structures has been demonstrated. Although these OPS-based techniques have found limi ted current commercial use, experience gained is applicable to the fabricat ion of optoelectronic devices. Specifically, integrated optical waveguides based on OPS have been developed.