Luminescence in porous silicon-surface vs. bulk

Citation
Kl. Narasimhan et S. Banerjee, Luminescence in porous silicon-surface vs. bulk, J POROUS MA, 7(1-3), 2000, pp. 283-286
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
283 - 286
Database
ISI
SICI code
1380-2224(200001)7:1-3<283:LIPSVB>2.0.ZU;2-J
Abstract
The mechanism of luminescence in porous silicon still remains poorly unders tood. The main point of controversy is whether the luminescence is due to r ecombination in the quantum size structures that constitute porous silicon or whether it is dominated by surface recombination. In this paper, we pres ent evidence that emphasises the role that surface recombination plays in t he luminescence of porous silicon. In this framework, we also attempt to re concile the resonant luminescence data (which argues for "bulk" recombinati on) with our results.