Contactless characterization of porous silicon structures by four-wave mixing and microwave techniques

Citation
V. Mizeikis et al., Contactless characterization of porous silicon structures by four-wave mixing and microwave techniques, J POROUS MA, 7(1-3), 2000, pp. 303-306
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
303 - 306
Database
ISI
SICI code
1380-2224(200001)7:1-3<303:CCOPSS>2.0.ZU;2-V
Abstract
We apply optical contactless techniques, namely the four-wave-mixing and mi crowave harmonics generation for the characterization of nanocrystalline fr ee-standing films and platelets of microcrystalline porous silicon. We obse rve (i) full carrier localization and significant lifetime shortening in fr ee-standing films, which is thought to be a manifestation of their low-dime nsional confinement, (ii) increased carrier lifetime in microcrystalline po rous silicon, presumably originating from passivated surface states at the surface of pores.