Macroscopic stress measurements are used to monitor Porous Silicon processi
ng. Silicon wafer of 1 Omega cm resistivity, n-type and < 1 0 0 > orientati
on were used as starting material. Porous Silicon layers with a porosity of
57% and a thickness of 85 mu m, fabricated by electrochemical anodisation,
were differently dried, then the evolution of the wafer deflection has bee
n followed with storage time in air. Thermal treatments both in inert and o
xidant atmosphere have been performed up to 1000 degrees C. The stress beha
viour vs. temperature allows to estimate the hydrogen desorption activation
energy.