Orientation effect of the wafer on the structural properties of p(+) type porous silicon layers

The structural properties of (111) oriented p(+) type Porous Silicon (PS) s amples are investigated using various X-ray diffraction techniques and comp ared to (001) p(+) type PS layer structure. High resolution X-ray diffracto metry was used to record rocking curves and reciprocal space maps, giving i ndications about the crystalline quality of the PS samples as well as about the pore orientation. X-ray diffraction and reflectivity performed on thin PS layers allow to estimate the layer thickness, porosity and roughness of the PS/substrate interface.