Electrical and optical properties of conducting polymer/porous silicon structures

Electrical and optical properties of diode structures based on porous silic on (PS) and thin films of phenylene vinylene oligomer (PVO) have been studi ed. Steady-state photoluminescence spectroscopy show that the structure of the luminescence band depends on the PS morphology. We assign the observed effect to the morphology-dependent penetration of PVO material into the por es. Current-voltage characteristics of the PVO/PS diodes are studied and in terpreted assuming Schottky emission and hopping transport of carriers as p ossible mechanisms of d.c. electrical conduction.