Raman scattering from metal-deposited porous silicon

Authors
Sakka, T Tsuboi, T Ogata, YH Mabuchi, M
Citation
T. Sakka et al., Raman scattering from metal-deposited porous silicon, J POROUS MA, 7(1-3), 2000, pp. 397-400
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF POROUS MATERIALS
ISSN journal
13802224 → ACNP
Volume
7
Issue
1-3
Year of publication
2000
Pages
397 - 400
Database
ISI
SICI code
1380-2224(200001)7:1-3<397:RSFMPS>2.0.ZU;2-W
Abstract
Raman scattering from porous silicon layer into which silver is immersion-p lated was studied. Ag-deposited samples show extra Raman bands. Heat treatm ent of the Ag-deposited samples results in a great decrease in such Raman b ands. Also dipping in hydrofluoric acid solution causes a spectral change. Some comments on the assignment of the Raman peaks of the Ag-deposited poro us silicon are given, and the structure of porous silicon on which metal is immersion-plated is discussed.