Compatibility of the low-dielectric-constant poly(arylether) with the electroless copper deposition solution

Citation
Dt. Hsu et al., Compatibility of the low-dielectric-constant poly(arylether) with the electroless copper deposition solution, J ELCHEM SO, 146(12), 1999, pp. 4565-4568
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
00134651 → ACNP
Volume
146
Issue
12
Year of publication
1999
Pages
4565 - 4568
Database
ISI
SICI code
0013-4651(199912)146:12<4565:COTLPW>2.0.ZU;2-K
Abstract
Possible interactions between nonfluorinated poly(arylether) thin films and the recently developed electroless Cu deposition solution are investigated . The results show that there is no chemical reaction between this low-diel ectric-constant polymer and the electroless Cu deposition solution. However , a significant change in thickness as well as refractive index is induced by the electroless solution conditions. It is demonstrated that higher temp eratures can alleviate the electroless Cu solution-induced effects as far a s the glass transition temperature, the coefficient of thermal expansion, a nd refractive index are concerned. (C) 1999 The Electrochemical Society. S0 013-4651(98)08-032-X. All rights reserved.