Surface recombination velocity from photocurrent measurements - Validationand applications

Photocurrent measurements can provide an easy method for evaluating surface recombination velocity and for mapping this quantity over a silicon wafer. This method is validated for the characterization of Si-SiO2 interfaces by comparison with surface-state density data measured in simultaneously proc essed capacitors. In addition, destructive and nondestructive approaches to this measurement are discussed and compared. The correlation to be expecte d between destructive and nondestructive measurements of surface recombinat ion is calculated by a theoretical model and experimentally verified. Final ly, surface recombination velocity measurements are used for the characteri zation of oxidation equipment and processes. (C) 1999 The Electrochemical S ociety. S0013-4651(99)04-023-9. All rights reserved.