Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates

Authors
Stibal, R Wickert, M Hiesinger, P Jantz, W
Citation
R. Stibal et al., Contactless mapping of mesoscopic resistivity variations in semi-insulating substrates, MAT SCI E B, 66(1-3), 1999, pp. 21-25
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
21 - 25
Database
ISI
SICI code
0921-5107(199912)66:1-3<21:CMOMRV>2.0.ZU;2-5
Abstract
The lateral homogeneity of the electrical resistivity rho of semi-insulatin g GaAs substrates is measured with high resolution using contactless capaci tive mapping. The improved technique is capable of imaging mesoscopic rho f luctuations correlated with the cellular structure of the dislocation densi ty. The results compare favorably with data obtained by point contact topog raphy. A measurement and statistical analysis procedure is described that a llows an individual evaluation of the macro- and mesocopic contributions to the total on-wafer rho variation. (C) 1999 Elsevier Science S.A. All right s reserved.