Citation
Dc. Look et al., Point defect characterization of GaN and ZnO, MAT SCI E B, 66(1-3), 1999, pp. 30-32
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
30 - 32
Database
ISI
SICI code
0921-5107(199912)66:1-3<30:PDCOGA>2.0.ZU;2-N
Abstract
Point defects are created in bulk ZnO and epitaxial GaN by 1-2 MeV electron
irradiation at 300 K, and are studied by temperature-dependent Hall effect
, photoluminescence, and deep level transient spectroscopy measurements. Th
e N vacancy is identified as a fairly shallow donor in GaN, whereas defect
identifications in ZnO are uncertain at this time. Both materials, but espe
cially ZnO, are quite resistant to displacement damage. (C) 1999 Elsevier S
cience S.A. All rights reserved.