Study of dopant-dependent band gap narrowing in compound semiconductor devices

Band gap narrowing (BGN) is one of the crucial heavy-doping effects to be c onsidered for bipolar devices. Using a physically-based approach (E.F. Schu bert, Doping in III-V Semiconductors, Cambridge University Press, 1993), we suggest a new BGN model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment i s especially useful for accurate device simulation. A comparison with exper imental data and other existing models is presented and study of BGN in III -V group semiconductors is performed. Finally, as a particular example we i nvestigated with our two-dimensional device simulator MINIMOS-NT (Simlinger et al., Simulation of submicron double-heterojunction high electron mobili ty transistors with MINIMOS-NT, IEEE Trans. Electron. Devices, Vol. 44, 199 7, pp. 700-707), the electrical behavior of a graded composition Si/SiGe HB T using a hydrodynamic transport model. (C) 1999 Elsevier Science S.A. All rights reserved.