Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

Authors
Koumetz, S Marcon, J Gautier, S Ketata, K Ketata, M Dubois, C
Citation
S. Koumetz et al., Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces, MAT SCI E B, 66(1-3), 1999, pp. 55-57
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
55 - 57
Database
ISI
SICI code
0921-5107(199912)66:1-3<55:BDIIIE>2.0.ZU;2-O
Abstract
The diffusion of Be during post-growth Rapid Thermal Annealing (RTA) in InG aAs, InGaAsP, InGaAs/InGaAsP and InGaAs/InP epitaxial structures grown by G as Source Molecular Beam Epitaxy (GSMBE) has been studied. The observed Sec ondary Ion Mass Spectrometry (SIMS) concentration distributions, obtained f or annealing cycles with time durations of 10-240 s and temperatures in the range of 700-900 degrees C for Be doping concentration of 3 x 10(19) cm(-3 ), could be explained by kick-out mechanism considering the neutral Be inte rstitial species and positively charged group-III self-interstitials. (C) 1 999 Elsevier Science S.A. All rights reserved.