Applying slow positrons to the study of ion implantation induced defects in GaAs

Authors
Knights, AP Malik, F Coleman, PG Gwilliam, R Sealy, BJ
Citation
Ap. Knights et al., Applying slow positrons to the study of ion implantation induced defects in GaAs, MAT SCI E B, 66(1-3), 1999, pp. 146-150
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
146 - 150
Database
ISI
SICI code
0921-5107(199912)66:1-3<146:ASPTTS>2.0.ZU;2-K
Abstract
The use of slow positron beams to study damage resulting from the ion impla ntation of GaAs is described in detail. The measurement of damage resulting from 125 keV Si+ is used as an example to demonstrate the sensitivity of t he technique to implant fluences of < 1 x 10(11) cm(-2). A method for extra cting defect profiles is also described and it is shown that for the curren t measurements a defect tail extends into the sample, probably resulting fr om ion channelling. Specific uses of the positron technique relevant to GaA s device fabrication are given. (C) 1999 Elsevier Science S.A. All rights r eserved.