Multiple quantum well GaAs/AlGaAs solar cells: transport and recombinationproperties by means of EBIC and cathodoluminescence

Citation
D. Araujo et al., Multiple quantum well GaAs/AlGaAs solar cells: transport and recombinationproperties by means of EBIC and cathodoluminescence, MAT SCI E B, 66(1-3), 1999, pp. 151-156
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
151 - 156
Database
ISI
SICI code
0921-5107(199912)66:1-3<151:MQWGSC>2.0.ZU;2-N
Abstract
Multiple quantum well (MQW) p-i-n heterostructures are a new alternative to increase the quantum efficiency of solar cell devices. In such structures, the QW carrier capture, carrier escape and radiative recombinations are th e phenomena governing the efficiency of the p-i(MQW)-n solar cell. In this contribution, in spite of the photon-induced current mode of work of such d evice, an electron beam-induced-current (EBIC) study allowing a very locali zed carrier excitation is reported. The EBIC measurements are shown to be a ble to estimate with high accuracy the QWs capture-escape and radiative lif etimes. The Patter are determined as a function of the carrier injection le vel fitting experimental EBIC profiles to simulated ones. Values around 10( -10) and 10(-7) s respectively are obtained. (C) 1999 Elsevier Science S.A. All rights reserved.