New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Authors
Mosser, V Callen, O Kobbi, F Adam, D Grattepain, C Draidia, N
Citation
V. Mosser et al., New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures, MAT SCI E B, 66(1-3), 1999, pp. 157-161
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
157 - 161
Database
ISI
SICI code
0921-5107(199912)66:1-3<157:NMFTCO>2.0.ZU;2-N
Abstract
Two new methods are presented for the characterization of the upper (dielec trics/semiconductor) and lower (epilayer/substrate) boundary conditions for devices using planar conduction in epilayers grown on SI-GaAs substrates. They make use of the same pseudomorphic AlGaAs/InGaAs/GaAs Hall heterostruc tures as test devices. They are used to investigate the electronic behavior of standard cleaned and ozone cleaned epilayer/substrate interfaces, and t he density of states of surface states as well as their dynamic behavior. ( C) 1999 Elsevier Science S.A. All rights reserved.