Mj. Romero et al., Failure analysis of heavily proton irradiated p(+)-n InGaP solar cells by EBIC and cathodoluminescence, MAT SCI E B, 66(1-3), 1999, pp. 189-193
In this paper the effects of heavy proton irradiation on single-junction (S
J) p(+)-n InGaP solar cells are investigated by means of electron-beam-indu
ced-current (EBIC) and cathodoluminescence (CL). A hole diffusion length re
duction from 0.3 to 0.02 mu m after 1 x 10(14) protons/cm(2) irradiation is
estimated from EBIC measurements. Such degradation is attributed mainly to
IE3 point defects as evidenced by the temperature dependence of the CL int
ensity. The electronic activity of such defects is shown to be reduced afte
r thermal treatment. Indeed an enhancement of the light emission is observe
d after electron bombardment only on InGaP while no recovery is observed on
the GaAs substrate. Such results illustrate the potential of EBIC/CL in de
vice failure analysis as they are non-destructive techniques. (C) 1999 Else
vier Science S.A. All rights reserved.