Citation
A. Vila et al., Microscopic investigation of intimate metal - InxGa1-xAs dot contacts obtained at room and cryogenic temperatures, MAT SCI E B, 66(1-3), 1999, pp. 203-208
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
66
Issue
1-3
Year of publication
1999
Pages
203 - 208
Database
ISI
SICI code
0921-5107(199912)66:1-3<203:MIOIM->2.0.ZU;2-W
Abstract
In this work, we present the microscopic characterisation of intimate Cu co
ntacts formed on (100) In0.53Ga0.47As surfaces. Previous I(V) measurements
indicate that Cu-In0.53Ga0.47As (100) dots formed ohmic contacts. In the pr
esent study, the metal-semiconductor interface is examined by a variety of
techniques, including transmission electron (TEM) and atomic force microsco
pies (AFM), Auger electron spectrometry (AES) and X-ray microanalysis (EDX)
. The configuration of the three intimate contacts is discussed in terms of
the interfacial reactions resulting from the differing deposition conditio
ns. (C) 1999 Elsevier Science S.A. All rights reserved.