Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR

Authors
Li, JJ Wang, RQ Liu, ZF Cai, SM Xiao, XY Sun, SG
Citation
Jj. Li et al., Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR, MOL CRYST A, 337, 1999, pp. 525-528
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS
ISSN journal
1058725X → ACNP
Volume
337
Year of publication
1999
Pages
525 - 528
Database
ISI
SICI code
1058-725X(1999)337:<525:IOTOEO>2.0.ZU;2-G
Abstract
In situ FTIR spectra of porous silicon are measured during electroluminesce nce (EL). It was found that oxidation process of porous silicon surface occ urs during EL, which is the main reason of the EL intensity decrease and re d shift of peak energy with time.